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Exact specifications should be obtained from the product data sheet.
| Manufacturer Product Number | CY7C109BN-20VCT |
| Manufacturer | Cypress Semiconductor Corp |
| NavitasChip Part Number | NAVI-12098707 |
| Description | IC SRAM 1MBIT PARALLEL 32SOJ |
| Spec | 32-BSOJ (0.400", 10.16mm Width) |
| Package | Bulk |
| Datasheet | Datasheet |
Product Attributes
| Type | Description |
|---|---|
| Category | Memory ICs |
| Manufacturer | Cypress Semiconductor Corp |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 32-SOJ |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | Cypress Semiconductor Corp CY7C109BN-20VCT Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The CY7C109BN-20VCT is a Memory IC manufactured by Cypress Semiconductor Corp (Cypress). Integrated Circuit SRAM 1mbit Parallel 32soj, housed in a compact 32-SOJ package, with 4.5V ~ 5.5V supply voltage.
Key Technical Specifications
- Supply Voltage: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting: Surface Mount
- Package: 32-BSOJ (0.400", 10.16mm Width)
- Device Package: 32-SOJ
Packaging: factory Bulk or Custom Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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