Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | IXYS |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 5.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1435 pF @ 800 V |
| Power Dissipation (Max) | 75.3W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISO247-3L |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | IXYS IXSJ25N120R1 Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | RoHS Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The IXSJ25N120R1 is a Transistor manufactured by IXYS. 1200V breakdown 62m (25A current @ 25c) Sic MOSFET, housed in a compact ISO247-3L package.
Key Technical Specifications
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting: Through Hole
- Package: TO-247-3
- Device Package: ISO247-3L
- RoHS Compliant
Packaging: factory Tube or Custom Tube Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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