Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | IXYS |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251AA |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | IXYS IXTU1R4N60P Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The IXTU1R4N60P is a Transistor manufactured by IXYS. MOSFET N-Channel 600V breakdown 1.4A current TO-251, housed in a compact TO-251AA package.
Key Technical Specifications
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting: Through Hole
- Package: TO-251-3 Short Leads, IPAK, TO-251AA
- Device Package: TO-251AA
Packaging: factory Tube or Custom Tube Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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