Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package | Bulk |
| Product Status | Discontinued at |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2045 pF @ 15 V |
| Power Dissipation (Max) | 2.3W (Ta), 31W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.2x3.2) |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | onsemi FDMC4435BZ-F127 Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The FDMC4435BZ-F127 is a Transistor manufactured by onsemi. P-Channelannel Power Trench MOSFET -3, housed in a compact 8-WDFN (3.2x3.2) package. Originally developed by Fairchild Semiconductor.
Key Technical Specifications
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting: Surface Mount
- Package: 8-PowerWDFN
- Device Package: 8-WDFN (3.2x3.2)
Packaging: factory Bulk or Custom Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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