Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Tariff Status | Tariff may apply if shipping to the United States |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Part Status | Active |
| Resource Type | Link |
|---|---|
| Datasheet | onsemi FQD5N60CTM Datasheet |
| Product Image | View Large Image |
| Attribute | Description |
|---|---|
| RoHS Status | RoHS Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
The FQD5N60CTM is a Transistor manufactured by onsemi. MOSFET N-Channel 600V Breakdown 2.8a Current DPAK, housed in a compact TO-252AA package. Originally developed by Fairchild Semiconductor, this component continues to be fully supported. Military temperature range (-55°C to +125°C).
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In Stock: 14,721 pcs
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Lead Time
18 Weeks
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