Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK |
| Part Status | Active |
| Resource Type | Link |
|---|---|
| Datasheet | onsemi NTD4969N-1G Datasheet |
| Product Image | View Large Image |
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
The NTD4969N-1G is a Transistor manufactured by onsemi. MOSFET N-Channel 30V breakdown 41A current Ipak-4.
Packaging: factory Tube or Custom Tube Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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