Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Tariff Status | Tariff may apply if shipping to the United States |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 800 V |
| Power Dissipation (Max) | 352W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | onsemi NTH4L022N120M3S Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | RoHS Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The NTH4L022N120M3S is a Transistor manufactured by onsemi. Sic Mos TO-247-4l 22mohm 1200V breakdown.
Key Technical Specifications
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting: Through Hole
- Package: TO-247-4
- Device Package: TO-247-4L
- RoHS Compliant
Packaging: factory Tube or Custom Tube Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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