Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 427 pF @ 15 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WDFN (2x2) |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | onsemi NTLJF4156NT1G Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | RoHS Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The NTLJF4156NT1G is a Transistor manufactured by onsemi. MOSFET N-Channel 30V breakdown 2.5A current 6WDFN, housed in a compact 6-WDFN (2x2) package.
Key Technical Specifications
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting: Surface Mount
- Package: 6-WDFN Exposed Pad
- Device Package: 6-WDFN (2x2)
- RoHS Compliant
Packaging: factory Tape & Reel (TR) or Cut Tape · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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