Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 267A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 650µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF @ 50 V |
| Power Dissipation (Max) | 5.1W (Ta), 291W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 8-TDFNW (8.3x8.4) |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | onsemi NTMTSC1D6N10MCTXG Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | RoHS Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The NTMTSC1D6N10MCTXG is a Transistor manufactured by onsemi. MOSFET N-Channel 100V breakdown 35A current/267A current 8tdfnw, housed in a compact 8-TDFNW (8.3x8.4) package.
Key Technical Specifications
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting: Surface Mount, Wettable Flank
- Package: 8-PowerTDFN
- Device Package: 8-TDFNW (8.3x8.4)
- RoHS Compliant
Packaging: factory Tape & Reel (TR) or Cut Tape · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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