Product Attributes
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Part Status | Active |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheet | onsemi RFP4N100 Datasheet |
| Product Image | View Large Image |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Product Description
The RFP4N100 is a Transistor manufactured by onsemi. MOSFET N-Channel 1000V breakdown 4.3A current TO-220-3.
Packaging: factory Tube or Custom Tube Quantity · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
Disclaimer: NavitasChip is an independent distributor of electronic components. We are not affiliated with, endorsed by, or an authorized distributor for the manufacturers listed on this page. All trademarks and brand names are the property of their respective owners and are used solely for identification purposes.
Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.
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