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K4B4G1646E-BYK000 Samsung Semiconductor, Inc.

DDR3-1600 4GB (256MX16)1.25NS CL

In Stock RoHS
K4B4G1646E-BYK000

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Exact specifications should be obtained from the product data sheet.

Manufacturer Product Number K4B4G1646E-BYK000
Manufacturer Samsung Semiconductor, Inc.
NavitasChip Part Number NAVI-24635879
Description DDR3-1600 4GB (256MX16)1.25NS CL
Date Code (D/C) 17+
Spec 96-TFBGA
Package Tray
Datasheet -

Product Attributes

Type Description
Category Memory ICs
Manufacturer Samsung Semiconductor, Inc.
Package Tray
Product Status Active
Memory Type Volatile
Memory Format DRAM
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.35V
Operating Temperature 0°C ~ 95°C
Mounting Type Surface Mount
Part Status Active

Documents & Media

Resource Type Link
Product Image View Large Image

Environmental & Export Classifications

Attribute Description
RoHS Status
REACH Status REACH Unaffected
ECCN EAR99

Product Description

The K4B4G1646E-BYK000 is a Memory IC manufactured by Samsung Semiconductor, Inc. (Samsung). DDR3-1600 4gb1.25ns Cl, housed in a compact 96-TFBGA package, with 1.35V supply voltage.

Key Technical Specifications

  • Supply Voltage: 1.35V
  • Operating Temperature: 0°C ~ 95°C
  • Mounting: Surface Mount
  • Package: 96-TFBGA

Packaging: factory Tray or Partial Tray · ESD-shielded, vacuum-sealed MBB to MSL standards.

Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.

Spot Buy Note

Stock quantities are dynamic and updated in real-time. For large quantity orders (1,000+ units), please contact us for real-time stock verification and custom pricing.

Shopping Guide

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In Stock: 5,600 pcs

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Factory Lead Time

Weeks, typically

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Unit Price: $6.5000
1+ $6.5000
Subtotal: $6.50
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