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Exact specifications should be obtained from the product data sheet.
| Manufacturer Product Number | K4B4G1646E-BYK000 |
| Manufacturer | Samsung Semiconductor, Inc. |
| NavitasChip Part Number | NAVI-24635879 |
| Description | DDR3-1600 4GB (256MX16)1.25NS CL |
| Date Code (D/C) | 17+ |
| Spec | 96-TFBGA |
| Package | Tray |
| Datasheet | - |
| Type | Description |
|---|---|
| Category | Memory ICs |
| Manufacturer | Samsung Semiconductor, Inc. |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Voltage - Supply | 1.35V |
| Operating Temperature | 0°C ~ 95°C |
| Mounting Type | Surface Mount |
| Part Status | Active |
| Resource Type | Link |
|---|---|
| Product Image | View Large Image |
| Attribute | Description |
|---|---|
| RoHS Status | |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
The K4B4G1646E-BYK000 is a Memory IC manufactured by Samsung Semiconductor, Inc. (Samsung). DDR3-1600 4gb1.25ns Cl, housed in a compact 96-TFBGA package, with 1.35V supply voltage.
Packaging: factory Tray or Partial Tray · ESD-shielded, vacuum-sealed MBB to MSL standards.
Fulfillment: MPN and Date Code verified on inbound · datasheet and compliance documents available · RFQ answered within 24 hours.
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